▎ 摘　　要

NOVELTY - A graphene transistor (100), comprises: a substrate (112); a source electrode (102) disposed on the substrate; a drain electrode (104) disposed on the substrate; a graphene channel (108) disposed on the substrate and extending between the source electrode and the drain electrode; and a top gate disposed on the graphene channel and including a nanostructure. USE - As graphene transistor (claimed) used to fabricate self-aligned CVD graphene transistor arrays, and for fabrication of high speed, self-aligned graphene transistors and functional circuits, such as graphene based RF circuits. ADVANTAGE - Using Al2O3 nanoribbons as the gate dielectric, the top-gated graphene transistor exhibit superior performance with high carrier mobility. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of fabrication process to obtain top gated graphene transistor using dielectric oxide nanowires. Graphene transistor (100) Source electrode (102) Drain electrode (104) Top gate electrode (106) Graphene channel (108) Zirconium oxide nanowire (110) Substrate (112) Silicon oxide layer (114)