▎ 摘　　要

NOVELTY - The device has a power semiconductor device chassis (1) whose side end surface is provided with a wiring slot (12). Two sets of wiring slots are located at the top of both sides of the power semiconductor device chassis. The side end surface of the wiring slot is provided with a pin core (2). The outer end of the pin inner core is sleeved with a protective ceramic square tube (3). A heat insulation pad (13) is arranged between the protective ceramic square tube and the wiring slot. The upper end surface of the power semiconductor device main chassis is provided with a heat dissipation groove (11). A heat dissipation film (111) is arranged in the heat dissipation groove. The protective ceramic square tube is made of alumina ceramics. The thermal insulation pad is made of thermal insulation silica gel. USE - Power semiconductor device used for high-power electronic devices in power conversion and control circuits of power equipment. ADVANTAGE - The device avoids damage to the inner core of the pin by sheathing the protective ceramic square tube on the outer end surface of the inner core of the pin, and isolates the inner cores of adjacent pins to avoid short circuits between the inner cores of the pins. The inner core of the pin is thermally welded through the protective ceramic square tube to avoid the short circuit caused by the outflow of solder. The welding quality of the inner core of the pin is greatly improved through the combination of the solder joint mold groove and the reinforcement groove. The power semiconductor device is integrated through the protective ceramic square tube. The main chassis is propped up, which reduces the force on the inner core of the pin. The service life of the pin core is improved, while leaving a gap between the main chassis of the power semiconductor device and the circuit board, which enhances the air flow efficiency on the surface of the main chassis of the power semiconductor device, thus improving the surface heat dissipation effect of the main chassis of the power semiconductor device. A graphene film is laid on the upper end of the main chassis of the power semiconductor device, which improves the heat dissipation effect of the main chassis of the power semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a power semiconductor device. Power semiconductor device chassis (1) Pin core (2) Protective ceramic square tube (3) Heat dissipation groove (11) Wiring slot (12) Heat insulation pad (13) Heat dissipation film (111)