• 专利标题:   Preparation of self-healing high stability silicon-based anode material, involves uniformly dispersing nitrogen-doped graphene-coated silicon-based anode material by chemical vapor deposition process, and pre-embedding with lithium.
  • 专利号:   CN107946574-A
  • 发明人:   WANG X, ZHOU Y, LIANG Q, PAN L, WANG M, LIU Y, ZHANG Y
  • 专利权人:   UNIV BEIJING JIAOTONG
  • 国际专利分类:   H01M010/0525, H01M004/36, H01M004/38, H01M004/62
  • 专利详细信息:   CN107946574-A 20 Apr 2018 H01M-004/36 201833 Pages: 7 Chinese
  • 申请详细信息:   CN107946574-A CN11162293 21 Nov 2017
  • 优先权号:   CN11162293

▎ 摘  要

NOVELTY - The method for preparing self-healing high stability silicon-based anode material, involves preparing nitrogen-doped graphene-coated silicon-based anode material, uniformly dispersing nitrogen-doped graphene-coated silicon-based anode material by chemical vapor deposition process, and pre-embedding the silicon-based material with lithium. The surface treatment of the material is conducive to long-term preservation in the air. USE - Method for preparing self-healing high stability silicon-based anode material. ADVANTAGE - The environmentally-friendly method enables simple preparation of self-healing high stability silicon-based anode material with high stability and high initial coulombic efficiency.