▎ 摘　　要

NOVELTY - A silicon substrate is placed in chemical-vapor-deposition reaction chamber system, and hydrogen is supplied and carbonized, to grow layer of carbon layer. The silicon substrate is heated to grow cubic silicon carbide and subjected to heteroepitaxial growth. A sample is placed in quartz tube and heated, and carbon layer is formed by reacting carbon tetrachloride and cubic silicon carbide. The carbon film is annealed. A palladium and gold metal are electron beam evaporation deposited and immersed in acetone, dried and baked, to obtain side-gate graphene field-effect transistor. USE - Manufacture of side-gate graphene field-effect transistor (claimed). ADVANTAGE - The method enables manufacture of side-gate graphene field-effect transistor having high electronic mobility and suppressed carrier scattering effects. DETAILED DESCRIPTION - A silicon substrate of 4-12 inches is washed to remove surface contaminants. The silicon substrate is placed in chemical-vapor-deposition reaction chamber system, and the reaction chamber is evacuated to 10-7 mbar and hydrogen is supplied and reacted and carbonized at 900-1100 degrees C and propane gas with flow rate of 40 ml/minute is supplied for 3-8 minutes, to grow layer of carbon layer. The silicon substrate is heated to grow cubic silicon carbide at 1100-1250 degrees C and propane and silane are supplied and subjected to heteroepitaxial growth for 35-70 minutes under hydrogen atmosphere and cooled to room temperature, to completely grow cubic silicon carbide. The cubic silicon carbide on surface of sample is subjected to plasma-enhanced chemical vapor deposition, to form layer of silica mask having thickness of 0.5-1 mu m. A gate electrode, source electrode, drain electrode and a conductive channel pattern are formed. The sample is placed in quartz tube and heated at 800-1000 degrees C. Carbon tetrachloride is heated at 60-80 degrees C and argon gas is supplied to three-necked flask and provided into quartz tube, and carbon tetrachloride and cubic silicon carbide for 30-120 minutes are reacted, to form carbon layer. The sample having carbon film is placed in buffer hydrofluoric acid solution. The carbon film is annealed with argon gas supply at 800-1000 degrees C for 10-25 minutes. A contact electrode is deposited on surface of graphene, and metallic contact is formed through photoetching. A palladium and gold metal are electron beam evaporation deposited to form metal contact layer. The sample is immersed in acetone for 10 minutes to remove residual poly(methyl methacrylate), dried and baked, to obtain side-gate graphene field-effect transistor.