▎ 摘　　要

NOVELTY - The utility model claims a packaging structure of silicon carbide power semiconductor high voltage device, relating to the semiconductor high voltage device packaging technology field. comprising a ceramic substrate, a silicon carbide power device, a metal positive electrode, a metal negative electrode and an external pin, the top end of the ceramic substrate is fixed with a substrate and a packaging box, the side surface of the substrate and the inner side of the packaging box are formed with a gap, the top end of the substrate is provided with a heat conducting metal sheet, the heat conducting metal sheet is located at the bottom of the metal negative electrode, the top end of the packaging box is connected with a packaging cover through the packaging part, the bottom end of the ceramic substrate is adhered with a radiator by bonding glue. This utility model makes use of the high surface energy of the metal grain under the nanometer scale, low melting point to characteristics the low temperature and low pressure sintering interconnection of the silicon carbide power device and the graphene film, the formed nano-silver interconnection layer has excellent high temperature resistance and high thermal conductivity, so that the heat emitted by the silicon carbide power device can be dissipated as quickly as possible, realizing the internal metal device is in a lower working environment.