▎ 摘　　要

NOVELTY - The method involves embedding a T-shaped gate metal electrode (2) in a rubber layer (3). A high-resistance silicon substrate (1) is formed with a silicon dioxide medium layer (4) by performing plasma enhanced chemical vapor deposition operation. Graphite moving process is performed. A source metal electrode layer (6) is formed as a drain metal electrode layer (7). Widths of the source and drain metal electrode layers are calculated to calculate width of a high-voltage graphene material motor. Metal titanium and gold-molybdenum alloy is coated on the high-resistance silicon substrate. USE - Method for preparing a high-voltage graphene material Nano-electro-mechanical resonator in a wireless electronic communication device. ADVANTAGE - The method enables realizing high-voltage graphene material Nano-electro-mechanical resonator preparing process in a smooth manner, preventing a local back-gate structure from being damaged, avoiding graphite alkene surface pollution during preparation operation in an effective manner, reducing high-frequency resonator signal parasitic capacitance rate, increasing graphene resonant frequency and fixing a Nano-electro-mechanical resonator, a fixed support beam and the local back-gate structure together so as to generate a high-frequency mechanical vibration signal and improve graphene channel quality, thus realizing gate lengthening process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a high-voltage graphene material Nano-electro-mechanical resonator. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a high-voltage graphene material Nano-electro-mechanical resonator. High-resistance silicon substrate (1) T-shaped gate metal electrode (2) Rubber layer (3) Silicon dioxide medium layer (4) Source metal electrode layer (6) Drain metal electrode layer (7)