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  • 专利标题:   Preparation of high c-axis oriented aluminum nitride thin film used for preparing surface acoustic wave device comprises spin coating graphene to substrate, reactive sputtering under nitrogen and argon mixed gas atmosphere, and depositing.
  • 专利号:   CN106011759-A, CN106011759-B
  • 发明人:   FU S, LI Q, PAN F, WANG M, ZENG F
  • 专利权人:   UNIV TSINGHUA, UNIV TSINGHUA
  • 国际专利分类:   C23C014/06, C23C014/35
  • 专利详细信息:   CN106011759-A 12 Oct 2016 C23C-014/35 201678 Pages: 13 Chinese
  • 申请详细信息:   CN106011759-A CN10801540 18 Nov 2015
  • 优先权号:   CN10801540

▎ 摘　　要

NOVELTY - Preparation of high c-axis oriented aluminum nitride thin film comprises spin coating graphene to substrate, reactive sputtering under nitrogen and argon mixed gas atmosphere, and depositing. USE - Method for preparing high c-axis oriented aluminum nitride thin film used for preparing surface acoustic wave device (claimed). ADVANTAGE - The method is simple, inexpensive, easy, and suitable for industrial production.