• 专利标题:   Preparation of polyimide film used for thin-film transistor flexible drive circuit, involves immersing substrate in graphene oxide composite polyimide film suspension containing thionyl chloride, dianhydride and diamine and dehydrating.
  • 专利号:   CN104558606-A
  • 发明人:   FAN T, FENG Y, LIU Y, MIN Y, SONG J, ZHANG D
  • 专利权人:   NANJING XINYUE MATERIAL TECHNOLOGY CO
  • 国际专利分类:   C08G073/10, C08J005/18, C08K003/04
  • 专利详细信息:   CN104558606-A 29 Apr 2015 C08G-073/10 201558 Pages: 8 Chinese
  • 申请详细信息:   CN104558606-A CN10763000 15 Dec 2014
  • 优先权号:   CN10763000

▎ 摘  要

NOVELTY - Preparation of polyimide film involves dispersing graphite in solvent, gradually adding thionyl chloride, dianhydride and diamine, mixing uniformly, adding dilute solution of polar solvent, stirring uniformly, obtaining graphene oxide composite suspension, immersing the substrate in the obtained graphene oxide composite polyimide film suspension, removing the substrate, placing the substrate into a tubular furnace and dehydrating. USE - Preparation of polyimide film used for thin-film transistor flexible drive circuit (claimed). ADVANTAGE - The method provides polyimide film having excellent uniformity, electroconductivity and mechanical strength.