• 专利标题:   Producing graphene nanoribbons, useful in graphene nanoribbon device, comprises heating closed carbon nanostructures, dispersing and agitating obtained nanostructures in organic solvent (1,2-dichloroethane), and recovering the nanoribbons.
  • 专利号:   US2011244661-A1
  • 发明人:   DAI H, JIAO L
  • 专利权人:   UNIV LELAND STANFORD JUNIOR
  • 国际专利分类:   B05D005/12, C01B031/04, H01L021/20
  • 专利详细信息:   US2011244661-A1 06 Oct 2011 H01L-021/20 201168 Pages: 25 English
  • 申请详细信息:   US2011244661-A1 US763888 20 Apr 2010
  • 优先权号:   US320737P, US763888

▎ 摘  要

NOVELTY - Producing graphene nanoribbons comprises: heating closed carbon nanostructures at 400-700 degrees C sufficient to induce oxidation but not thermal decomposition of the nanostructures and produce partially etched closed carbon nanostructures; dispersing the partially etched closed carbon nanostructures in an organic solvent; mechanically agitating (2) the partially etched closed carbon nanostructures in the organic solvent under conditions thus the partially etched closed carbon nanostructures open to form graphene nanoribbons; and recovering the graphene nanoribbons from the organic solvent. USE - The method is useful for producing graphene nanoribbons which are useful to form graphene nanoribbon device (claimed). ADVANTAGE - The method provides the graphene nanoribbons: having narrow widths and atomically smooth edges exhibiting band gaps for room temperature transistor operations with excellent switching speed and high carrier mobility (potentially even ballistic transport); in high yields (80%) that enable facile fabrication of graphene nanoribbon devices (exhibiting phase coherent electron transport at low temperature), making these materials easily accessible for a wide range of fundamental and practical applications; which exhibits ultra-high quality with atomically smooth edges for narrow graphene nanoribbons, low ratios of disorder (D) to graphitic (G) Raman bands and high electrical conductivity; which exhibits metallic behavior with little disorder effect and low resistivity; and which provides high yield and efficiency in many laboratories without highly specialized and expensive equipment. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene nanoribbon having a discrete number of layers (108, 110) of 1-4, a width of 10-30 nm and having surface integrity sufficient to yield a Raman Peak ratio (disorder (D) to graphitic (G) Raman bands (ID/IG)) of less than 0.5. DESCRIPTION OF DRAWING(S) - The figure shows a schematic diagram of unzipping the multi-walled carbon nanotubes to form graphene nanoribbons. Bond disruption (1) Agitation (2) disrupted area (104) inner layers (106) Layers (108, 110)