▎ 摘　　要

NOVELTY - A graphene device comprises: a channel layer (C1) on a substrate, where the channel layer includes graphene; a source electrode on a first region of the channel layer; a drain electrode (D1) on a second region of the channel layer; a capping layer (CP1) covering the channel layer; a gate (G1) insulating layer (GI1) on the capping layer to cover the channel region; and a gate on the gate insulating layer between the source electrode and the drain electrode. USE - As a graphene device such as transistor (claimed). ADVANTAGE - The graphene device is high-performance graphene. The device prevents or reduces the damage to or pollution of graphene. The method of manufacturing the graphene device is more easily performed even on a large-size substrate (wafer) with a diameter of greater than or equal to 300 mm, thus increases productivity of a graphene device while lowering its manufacturing costs. DETAILED DESCRIPTION - A graphene device comprises: a channel layer (C1) on a substrate, where the channel layer includes graphene; a source electrode on a first region of the channel layer; a drain electrode (D1) on a second region of the channel layer; a capping layer (CP1) covering the channel layer, where the source electrode, and the drain electrode, and the capping layer include an opening exposing a channel region of the channel layer between the source electrode and the drain electrode; a gate (G1) insulating layer (GI1) on the capping layer to cover the channel region; and a gate on the gate insulating layer between the source electrode and the drain electrode. An INDEPENDENT CLAIM is included for manufacturing a graphene device involving: forming at least one stacked structure on a first substrate, where the stacked structure includes sacrificial layer, a catalyst layer, and a graphene layer sequentially stacked thereon; adhering a second substrate onto the at least one stacked structure; and separating the first substrate by etching the sacrificial layer. DESCRIPTION OF DRAWING(S) - The figure shows a cross-sectional view of graphene device. Channel layer (C1) Drain electrode (D1) Gate (G1) Passivation layer (P1) Source electrode (S1) Capping layer (CP1) First electrode pad (PD1) Second electrode pad (PD2) Third electrode pad (PD3) First contact plug (PG1) Second contact plug (PG2) Third contact plug (PG3)