• 专利标题:   Laser contacting process used for bonding semiconductor elements, involves controlling amount of laser light absorbed by laser control structure, and bonding contacting sections and contacting object.
  • 专利号:   DE102022115030-A1, US2022402070-A1, KR2022169907-A, CN115570263-A
  • 发明人:   JANG K S, EOM Y S, CHOI G, CHOI K, JOO J, MOON S, LEE C, CHANG K S, MUN C K, JOO J H, MOON S H, LEE C M, WEN S, ZHU Z, CUI G, YAN L, CHANG K
  • 专利权人:   ELECTRONICS TELECOM RES INST, ELECTRONICS TELECOM RES INST
  • 国际专利分类:   H01L021/58, H01L021/60, H01L023/14, H01L023/488, B23K026/324, B23K026/06, B23K026/20, H01L023/00, B05D005/06, B05D007/24, B23K026/21, B23K026/70, C09K003/00
  • 专利详细信息:   DE102022115030-A1 22 Dec 2022 H01L-021/60 202303 Pages: 31 German
  • 申请详细信息:   DE102022115030-A1 DE10115030 15 Jun 2022
  • 优先权号:   KR080104, KR073094

▎ 摘  要

NOVELTY - The process involves forming (S1) bonding portions on a substrate, and creating (S2) a bonding object on the bonding portions. A laser control structure is created (S3) on the bonding object or the substrate. A laser is radiated to the bonding object and the bonding portions. An amount of laser light absorbed by the laser control structure is controlled (S4). The controlled amount of laser light is used to heat the bonding portions and the bonding object to a bonding temperature. The contacting sections and the contacting object are contacted (S5). The laser control structure contains a first substrate (710) including a first region and a second region, a first thin film laminate (720) at the first region, and a second thin film laminate (730) at the second region. The first thin film laminate includes a first thin film layer (721) and a second thin film layer (722) laminated to the first region. USE - Laser contacting process used for bonding semiconductor elements and for mass production of small quantities and custom-made special parts in fields of electrical/electronics industry, semiconductor industry and automotive industry. ADVANTAGE - The laser bonding method can perform high-temperature soldering even with a low laser power, because the light-to-heat conversion efficiency of a laser light source in a laser bonding process depends solely on a substrate and a bonding object. The laser bonding process prevents thermal deformation or aging caused when applied to an element or a portion where bonding is not required. The process simplifies processes by single laser emission on bonding areas having different melting points. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a laser control structure. DESCRIPTION OF DRAWING(S) - The drawings show the flowchart showing a laser bonding method, and the cross-sectional views showing a laser control structure. (Drawing includes non-English language text) 710First substrate 720First thin film laminate 721First thin film layer 722Second thin film layer 730Second thin film laminate S1Step for forming bonding portions on a substrate S2Step for creating a bonding object on the bonding portions S3Step for creating a laser control structure on the bonding object S4Step for controlling an amount of laser light absorbed by the laser control structure S5Step for bonding the contacting sections and the contacting object