▎ 摘　　要

NOVELTY - The method involves providing (S01) a bottom electrode substrate, and preparing a first functional layer on the bottom electrode substrate. A quantum dot material is formed (S02) on the first functional layer to prepare a quantum dot light-emitting layer. A second functional layer is prepared (S03) on the quantum dot light-emitting layer, a top electrode is prepared on the second functional layer, and a quantum dot LED is prepared. The device is heated. The bottom electrode substrate is an anode substrate, the first functional layer is a hole functional layer, the second functional layer is an electron functional layer, and the top electrode is a cathode or the bottom electrode substrate is a cathode substrate, the first functional layer is an electron functional layer, the second functional layer is a hole functional layer, and the top electrode is an anode. USE - Method for preparing quantum dot LED. ADVANTAGE - The QLED has high brightness, low power consumption, wide color gamut, easy processing, high quality of thin film for injection and transmission of electron and hole, reduced non-radiation composite probability, and improved efficiency and stability. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the preparation method of quantum dot LED. (Drawing includes non-English language text) Step for providing a bottom electrode substrate, and preparing a first functional layer on the bottom electrode substrate (S01) Step for forming quantum dot material on the first functional layer to prepare a quantum dot light-emitting layer (S02) Step for preparing second functional layer on the quantum dot light-emitting layer, preparing a top electrode on the second functional layer, and preparing a quantum dot LED (S03)