• 专利标题:   Method for reducing secondary electron emission coefficient by etching nanopore graphene used for e.g. particle accelerator, involves mixing graphene with methylpyrrolidone solution, coating graphene solution on metal substrate surface.
  • 专利号:   CN106044757-A, CN106044757-B
  • 发明人:   XIE G, CUI W, YANG J, LI Y, HU T, BAI C, WANG X, ZHANG N
  • 专利权人:   XIAN INST SPACE RADIO TECHNOLOGY
  • 国际专利分类:   C01B031/04, C01B032/194
  • 专利详细信息:   CN106044757-A 26 Oct 2016 C01B-031/04 201702 Pages: 9 Chinese
  • 申请详细信息:   CN106044757-A CN10378294 31 May 2016
  • 优先权号:   CN10378294

▎ 摘  要

NOVELTY - The method for reducing secondary electron emission coefficient, involves ultrasonically cleaning the metal substrate with acetone and alcohol, drying with nitrogen, mixing graphene with methylpyrrolidone solution to obtain graphene solution, coating graphene solution on the surface of metal substrate to form nano graphene film, annealing the metal substrate coated with the graphene solution under the protection of nitrogen, etching the gold with the argon ion energy, removing organic residue from graphene film and forming graphene nanopore on the surface of the graphene film. USE - Method for reducing secondary electron emission coefficient by etching nanopore graphene used for particle accelerator, vacuum transmission line and high-power microwave component. ADVANTAGE - The method provides secondary electron emission coefficient of 1.5-1.1, secondary electron emission coefficient on the surface of graphite to 0.9, adjustable electron emission coefficient of 0.9-1.5, and performs etching of nanopore graphene with simple and convenient operation, high stability and low surface insertion loss. DETAILED DESCRIPTION - Method for reducing secondary electron emission coefficient, involves ultrasonically cleaning the metal substrate with acetone and alcohol for 20-60 minutes, drying with nitrogen, mixing 0.1-1 mg/mL graphene with methylpyrrolidone solution to obtain graphene solution, coating 0.05-0.3 mL graphene solution on the surface of the metal substrate after blowing nitrogen to form nano graphene film, annealing the metal substrate coated with the graphene solution for 1 hour under the protection of nitrogen at 300-500 degrees C to remove residual organic matter on the surface, etching the gold with the argon ion energy of 1-5 keV, removing organic residue from graphene film for 1 minute and forming graphene nanopore on the surface of the graphene film.