• 专利标题:   Photoelectric sensor, comprises substrate, two metal electrodes which are provided on substrate, molybdenum disulfide membrane and vertically grown graphene embedded carbon membrane.
  • 专利号:   CN108666381-A
  • 发明人:   ZHANG X, CHEN Z, CHEN W, DIAO D
  • 专利权人:   UNIV SHENZHEN
  • 国际专利分类:   H01L031/0352, H01L031/028, H01L031/032, H01L031/109, H01L031/18
  • 专利详细信息:   CN108666381-A 16 Oct 2018 H01L-031/0352 201875 Pages: 10 Chinese
  • 申请详细信息:   CN108666381-A CN10436741 09 May 2018
  • 优先权号:   CN10436741

▎ 摘  要

NOVELTY - A photoelectric sensor comprises substrate, two metal electrodes which are provided on the substrate, molybdenum disulfide membrane and vertically grown graphene embedded carbon membrane, where the molybdenum disulfide membrane and vertically grown graphene embedded carbon membrane are provided on the substrate, partially overlapping region is provided between the molybdenum disulfide membrane and vertically grown graphene embedded carbon membrane, the partially overlapping regions form photoelectric heterojunction by Van der Waals interaction and both ends of the molybdenum disulfide membrane and vertically grown graphene-embedded carbon membrane (which are not overlapped) are provided on surfaces of the metal electrodes. USE - Photoelectric sensor. ADVANTAGE - The photoelectric sensor has photoelectric heterojunction which is formed by molybdenum disulfide membrane and vertically grown graphene embedded carbon membrane, such that effectively improving response sensitivity of sensor, wide detection range and strong detection ability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing the photoelectric sensor.