▎ 摘　　要

NOVELTY - A silicon substrate is washed, added to reaction chamber with chemical vapor deposition system, vacuumized, and carbonized. Propane is added to chamber, and carbonization is carried out for 3-7 minutes to form carbide layer. The obtained material is heated, and propane and silane are added to form hetero-epitaxy film. Obtained material is cooled, added to quartz tube and heated. A mixed gas of argon and chlorine is added to quartz tube to generate a carbon layer. The obtained carbon film sample is subjected to argon atmosphere, and annealed to obtain large-area graphene. USE - Manufacture of large-area graphene used for sealing gas and liquid. ADVANTAGE - The method efficiently provides large-area graphene having smooth surface and low porosity. DETAILED DESCRIPTION - A silicon substrate is washed, added to a reaction chamber with chemical vapor deposition system, vacuumized, and carbonized at 950-1150 degrees C under hydrogen protection. Propane is added to the chamber, and carbonization process is carried out for 3-7 minutes to form a carbide layer. The obtained material is heated at 1150-1300 degrees C, and propane and silane are added to form hetero-epitaxy film. The obtained material is cooled to room temperature under hydrogen atmosphere, added to a quartz tube and heated at 700-1050 degrees C. A mixed gas of argon and chlorine is added to a quartz tube for 3-5 minutes to generate a carbon layer. The obtained carbon film sample is subjected to argon atmosphere, and annealed at 1000-1100 degrees C for 10-25 minutes to obtain large-area graphene.