▎ 摘　　要

NOVELTY - Nitride heterojunction comprises a singlecrystal silicon carbide substrate, a graphene buffer layer, an aluminum nitride nucleating layer, a gallium nitride aluminum nitride super-lattice channel layer, an aluminum nitride inserting layer, a phosphorus-doped aluminum nitride barrier layer and a gallium nitride cap sequentially arranged. USE - Nitride heterojunction on silicon carbide based on nitrogen-doped graphitization. ADVANTAGE - The heterojunction adopts silicon carbide epitaxial graphene compared with the traditional to substrate transfer graphene which can greatly reduce the impurity introduced in the transfer, because the surface graphene a hanging key. This makes it possible to introduce defects on the surface of the graphene easier to increase the nucleation density of the nitride, so that the growth quality of the subsequent grown aluminum nitride layer and the gallium nitride layers is good. The structure can effectively limit the two-dimensional electron gas to the aluminum-nitride-aluminum nitride super-lattice channel layer, so as to realize the purpose of channel layer two- dimensional electron gas high mobility. It can be used for manufacturing HEMT device with high performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparation method of nitride heterojunction on silicon carbide based on nitrogen-doped graphitization. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of the nitride heterojunction on silicon carbide based on nitrogen-doped graphitization (Drawing includes non-English language text).