▎ 摘　　要

NOVELTY - Near infrared wide band optical switch based on graphene absorption enhancement comprises a substrate, and a modulation layer covered on the substrate. The modulation layer is provided with a dielectric layer and a metal nano-cylindrical array through photo-etching-coating. The metal nano-cylindrical array is used as the first electrode. The modulation layer is provided with second electrode through coating. The modulation layer is a graphene layer. One layer of graphene layer is directly grown or transferred to the substrate. The graphene layer is applied with a direct current bias voltage in the vertical direction. The material of the dielectric layer is photoresist, which is spin-coated on the upper part of the modulation layer by spin coating machine, and formis a layer of uniform photoresist film and dielectric layer by the secondary double-beam holographic lithography process. The material of the metal nanocylinder array metal aluminum. USE - Used as near infrared wide band optical switch based on graphene absorption enhancement. ADVANTAGE - The switch: solves the problems of low modulation depth and complicated preparation; realizes kind of independent of incident polarization; and has relatively simple structure and preparation, excellent modulation depth and modulation bandwidth. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the near infrared wide band optical switch based on graphene absorption enhancement.