▎ 摘　　要

NOVELTY - A large-area graphene is prepared by cleaning silicon substrate, placing in chemical vapor deposition reaction chamber, heating, introducing propane and silane gas, performing hydrogen etching, heating, introducing silane gas, argon gas and chlorine gas, plating with copper film using physical vapor deposition method, annealing for 30 minutes and immersing in ferric chloride solution. USE - Method for preparing large-area graphene (claimed). ADVANTAGE - The graphene has smooth surface, good continuity and low porosity. DETAILED DESCRIPTION - A large-area graphene is prepared by cleaning 4-12 inches silicon substrate, placing in chemical vapor deposition reaction chamber at 7-10 mbar, heating at 1000-1500 degrees C, introducing propane gas with flow rate of 40 cm3/minute for 4-8 minutes, heating at 1150-1350 degrees C, introducing propane and silane gas for 36-60 minutes, performing hydrogen etching, heating at 850-900 degrees C, introducing silane gas with flow rate of 0.5-0.8 mL/minute for 12 minutes, heating at 800-1000 degrees C, introducing argon and chlorine gas for 4-7 minutes, plating with copper film using physical vapor deposition method, heating at 950-1150 degrees C, annealing for 30 minutes and immersing in ferric chloride solution.