• 专利标题:   Boron-dopedsilicon quantum dot based gas flow rate detector, has graphene layer attached on outer wall of detecting pipeline, and first and second electrodes fixed on graphene layer that is fixed with side of detecting pipeline.
  • 专利号:   CN111308122-A
  • 发明人:   YANG P, SHEN K, YANG W, MA C, LI J
  • 专利权人:   UNIV YUNNAN
  • 国际专利分类:   G01P005/08
  • 专利详细信息:   CN111308122-A 19 Jun 2020 G01P-005/08 202055 Pages: 9 Chinese
  • 申请详细信息:   CN111308122-A CN11239688 06 Dec 2019
  • 优先权号:   CN11239688

▎ 摘  要

NOVELTY - The detector has a detecting unit fixed on an outer wall of a detecting pipeline that is formed with a first hole, a second hole and a third hole. Two ends of the detecting pipeline are respectively connected with a pipeline. The detecting unit is fixed with a side of a graphene layer and provided with a first electrode and a second electrode. The graphene layer is attached on an outer wall of the detecting pipeline. The first electrode and the second electrode are fixed on the graphene layer that is fixed with a side of the detecting pipeline. USE - Boron-dopedsilicon quantum dot based gas flow rate detector. ADVANTAGE - The detector avoids graphene layer falling issues and detects gas flow rate in the pipeline based on number of boron-doped silicon quantum dots on the graphene layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a boron-dopedsilicon quantum dot based gas flow rate detecting system. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a boron-doped silicon quantum dot based gas flow rate detector.