▎ 摘　　要

NOVELTY - Semiconductor structure comprises a copper conductive structure formed in a dielectric layer and below at least one etch stop layer (ESL), and a bi-layer liner adjacent to the copper conductive structure, where the bi-layer liner comprises a first layer of graphene adjacent to the copper conductive structure and a second layer adjacent to the first layer and at an interface between the copper conductive structure and a first conductive structure below the copper conductive structure. USE - Semiconductor structure. ADVANTAGE - The semiconductor structure has improved electrical performance of the conductive structure, and improves flow of copper more than cobalt but also increases sheet resistance of the conductive structure more than cobalt. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for forming semiconductor structure, which involves (a) forming a recess in a dielectric layer above a first conductive structure; (b) forming at least one liner material on sidewalls and a bottom surface of the recess; (c) forming a first graphene layer over the at least one liner material; (d) forming a copper conductive structure in the recess; (e) forming a layer of cobalt on a top surface of the copper conductive structure; and (f) forming a second graphene layer on the layer of cobalt. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a conductive structure. 218Dielectric layer 244Conductive structure 302Graphene liner 304Graphene cap 310Barrier layer