▎ 摘　　要

NOVELTY - The detector has a row-level circuit that is distributed in a pixel and that selects a signal to be processed according to a row-gating signal of a timing generating circuit, outputs a current signal to a column-level analog front end circuit for current-to-voltage conversion and outputs under an action of a bias voltage generating circuit. A third bias voltage is output to the bias voltage generating circuit when the row-level circuit is controlled by a row selection switch and is gated. The bias voltage generating circuit outputs a first bias voltage and a second bias voltage according to an input constant voltage and a third bias voltage. The column level analog front end circuit obtains two currents according to a first bias voltage and a second bias voltage and performs transimpedance amplification on a difference between two generated currents to output as an output voltage. USE - CMOS process based infrared micro-bridge detector for background monitoring market, vehicle auxiliary market, household market, intelligent manufacturing market and mobile phone application field. ADVANTAGE - The detector includes the larger duty ratio, lower thermal conductivity and less heat capacity, so that the detection sensitivity of the infrared micro-bridge detector is higher, the detection distance is further and the detection performance is better. The detector can make the detector pixel size smaller, thus, realizing smaller chip area under the same array pixel, which is more beneficial for realizing chip miniaturization. The production line is mature. The process control precision is higher. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional structure of an infrared micro-bridge detector pixel. Beam structure (11) Metal interconnection layer (101) Dielectric layer (102) Silicon substrate (103) Through hole (104)