▎ 摘　　要

NOVELTY - A preparation method of graphite thermal field material surface-coated with tantalum carbide coating, involves (1) surface-processing a surface of a graphite element using high-pressure water containing spherical carbon black, so that the surface of the graphite element becomes uneven, (2) spraying deionized water solution of high-purity tantalum powder and high-purity graphene aqueous solution through a high pressure squirt gun into a container for blending, mixing and filtering, and drying to obtain plasma sprayed powder, (3) plasma spraying the plasma sprayed powder using a laser plasma spraying device, reciprocatingly fast spraying on the surface of the graphite element after surface treatment in the step (1), and (4) infiltrating the graphite element after spraying in the step (3) at 1500-2800degreesC under argon gas atmosphere with tantalum powder, graphene powder and graphite substrate, carbonizing to generate tantalum carbide, and forming tantalum carbide coating. USE - Preparation method of graphite thermal field material surface-coated with tantalum carbide coating (claimed), for use in high temperature third-generation semiconductor crystal growth furnace. ADVANTAGE - The preparation method has high production efficiency, low energy consumption, and low pollution, and provides product with high purity and excellent thermal shock resistance. The formed tantalum carbide coating is dense, high in strength, high in purity and resistant to high temperature erosion. The final drawing strength of the tantalum carbide coating reaches 5 MPa, and the impurity content is controlled below 2 ppm. The graphite thermal field material coated with the tantalum carbide coating on the surface can be directly used in a high-temperature furnace protected by vacuum and inert gas, and can be used stably at a temperature of 1000-2500degreesC.