▎ 摘　　要

NOVELTY - The device has a graphene layer (120) arranged on a substrate (110). A fluoropolymer (140) i.e. ether fluoropolymer, or a hydrofluoropolymer layer is arranged on the graphene layer. The substrate comprises silicon with a silicon oxide layer arranged between the silicon and the graphene layer. The fluoropolymer layer or hydrofluoropolymer layer is arranged on the substrate between the substrate and the graphene layer. A molybdenum disulfide layer is arranged on the substrate. The fluoropolymer layer is arranged on the molybdenum disulfide layer. USE - Graphene-based and molybdenum sulfide-based semiconductor device i.e. FET (claimed). ADVANTAGE - The device allows a dipole layer in reduction of dimensionless fine structure constant, thus improving mobility. The device allows significant favorable modification of electronic properties of a monolayer graphene FET with a selected organic material without a complicated fluorination fabrication process. DETAILED DESCRIPTION - The substrate comprises silicon, glass and polymer. An INDEPENDENT CLAIM is also included for a method for forming a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a FET including a coated graphene layer. Substrate (110) Graphene layer (120) Source/drain electrodes (130) Fluoropolymer (140)