▎ 摘　　要

NOVELTY - Preparation of defect-free peak graphene film, involves (1) taking nickel foil as substrate, ultrasonically cleaning the nickel foil substrates using cleaning solution, removing the surface oxide layer, cleaning for 20-30 minutes, ultrasonically cleaning in ethanol for 20-30 minutes to remove contaminants, (2) activating the surface of treated nickel foil substrate using surfactant for 15-30 minutes, using mixed solution to perform secondary activation of nickel foil substrate for 20-30 minutes and drying the treated nickel foil substrate in nitrogen atmosphere. USE - Preparation of defect-free peak graphene film. ADVANTAGE - The method enables preparation of defect-free peak graphene film with high quality by simple process. DETAILED DESCRIPTION - Preparation of defect-free peak graphene film, involves (1) taking nickel foil as substrate, ultrasonically cleaning the nickel foil substrates using cleaning solution, removing the surface oxide layer, cleaning for 20-30 minutes, ultrasonically cleaning in ethanol for 20-30 minutes to remove contaminants, (2) activating the surface of treated nickel foil substrate using surfactant for 15-30 minutes, using mixed solution to perform secondary activation of nickel foil substrate for 20-30 minutes, drying the treated nickel foil substrate in nitrogen atmosphere, (3) placing the dried nickel foil substrate in vacuum oven and heating continuously under argon environment, purging with hydrogen at 400-700 degrees C, (4) heating at 850-900 degrees C for 20-40 minutes and cooling at rate of 5-15 degrees C/minute.