• 专利标题:   A method of diamond nucleation comprises,providing substrate and forming graphene layer on surface of the substrate.
  • 专利号:   TW201641752-A, TW546425-B1
  • 发明人:   TZENG Y, CHANG C, TZENG Y H
  • 专利权人:   UNIV NAT CHENG KUNG
  • 国际专利分类:   B32B009/00, C23C016/02, C23C016/27, C23C016/455, C30B025/18, C30B029/04
  • 专利详细信息:   TW201641752-A 01 Dec 2016 C30B-025/18 201720 Pages: 1 Chinese
  • 申请详细信息:   TW201641752-A TW116395 22 May 2015
  • 优先权号:   TW116395

▎ 摘  要

NOVELTY - The present invention relates to a method of diamond nucleation, comprising the following steps: providing a substrate and forming a graphene layer on a surface of the substrate; providing a reaction chamber and disposing the substrate in the reaction chamber; providing a gas mixture in the reaction chamber, wherein the gas mixture includes a carbon-containing gas; and forming a plasma in the reaction chamber to cause the carbon-containing gas to react and form a plurality of nuclei on the surface of the graphene layer. The structure formed by this method comprises a substrate; a graphene layer disposed on the substrate; and a plurality of diamond particles formed on the graphene layer.