▎ 摘　　要

NOVELTY - A low temperature plasma-based 3-stage process operable at room temperature for direct deposition of graphene layer(s) onto a substrate involves plasma-depositing thin film comprising silicon-based graphene-philic layer(s) onto a substrate via plasma enhanced chemical vapor deposition, and subjecting the layered substrate to laser treatment using a laser beam to convert the amorphous nanocarbon film to graphene layer(s). The graphene-philic silicon-based layer is a thin film of 10-100 nm thickness. The carbon-containing layer(s) is an amorphous nanocarbon film. USE - Low temperature plasma-based 3-stage process used for preparing substrate coated with graphene-containing thin film comprising 3-10 layers of graphene for producing semiconductors, electrical conductors, medical device and in sensor, preferably semiconductor components and components for electrical conducting products (all claimed). ADVANTAGE - The method is carried out at low temperatures, preferably room temperature, so that substrates with low melting temperatures, such as plastics, can be coated. DETAILED DESCRIPTION - A low temperature plasma-based 3-stage process operable at room temperature for direct deposition of graphene layer(s) onto a substrate involves (i) plasma-depositing thin film comprising silicon-based graphene-philic layer(s) onto a substrate via plasma enhanced chemical vapor deposition (PECVD) , (ii) plasma depositing onto layered substrate from step (i) with a carbon source to provide carbon-containing layer(s) on the substrate via PECVD, and (iii) subjecting the layered substrate to laser treatment using a laser beam to convert the amorphous nanocarbon film to graphene layer(s). The graphene-philic silicon-based layer is a thin film of 10-100 nm thickness. The carbon-containing layer(s) is an amorphous nanocarbon film. The temperature at each steps does not exceed the melting temperature of the substrate, and is preferably from room temperature to 99 degrees C. INDEPENDENT CLAIMS are included for the following: (1) use of the process for preparing substrate coated with graphene-containing thin film comprising 3-10 layers of graphene; and (2) use of layered substrate for producing semiconductors, preferably semiconductor components.