• 专利标题:   Preparing graphene thin film used as transparent conductive electrode, involves spacing carrier by spacer and superimposing metal substrate to obtain multi-layer metal substrate structure, and transferring carrier to reactor.
  • 专利号:   CN104803372-A, CN104803372-B
  • 发明人:   JIN H, PENG P, WANG Z, ZHOU Z, CHANG B, CHEN X, YIN H
  • 专利权人:   CHANGZHOU ERWEI CARBON TECHNOLOGY CO LTD, CHANGZHOU 2D CARBON GRAPHENE MATERIAL CO
  • 国际专利分类:   C01B031/04, C01B032/184, C01B032/19
  • 专利详细信息:   CN104803372-A 29 Jul 2015 C01B-031/04 201576 Pages: 10 Chinese
  • 申请详细信息:   CN104803372-A CN10042237 28 Jan 2014
  • 优先权号:   CN10042237

▎ 摘  要

NOVELTY - Preparing graphene thin film involves spacing carrier by a spacer and superimposing metal substrate to obtain multi-layer metal substrate structure. The carrier is transferred to the reactor and heated under vacuum or inert gas. The carrier is mixed with a reducing gas at 900-1100 degrees C. The inert gas and reducing gas in the reactor are heated and annealed. The carbon source is applied to obtain graphene thin film on the metal substrate. The metal substrate is transferred in separator and the graphene film is separated from the metal substrate. USE - Method for preparing graphene thin film used as the transparent conductive electrode (claimed).