▎ 摘　　要

NOVELTY - Preparing graphene thin film involves spacing carrier by a spacer and superimposing metal substrate to obtain multi-layer metal substrate structure. The carrier is transferred to the reactor and heated under vacuum or inert gas. The carrier is mixed with a reducing gas at 900-1100 degrees C. The inert gas and reducing gas in the reactor are heated and annealed. The carbon source is applied to obtain graphene thin film on the metal substrate. The metal substrate is transferred in separator and the graphene film is separated from the metal substrate. USE - Method for preparing graphene thin film used as the transparent conductive electrode (claimed).