• 专利标题:   Manufacturing a graphene film involves preparing a substrate comprising a graphene layer, doping the graphene layer with a nitrogen dopant by irradiating ultraviolet rays to the substrate in a reaction gas atmosphere.
  • 专利号:   KR2020020248-A
  • 发明人:   PARK J H
  • 专利权人:   ELECTRONICS TELECOM RES INST
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   KR2020020248-A 26 Feb 2020 C01B-032/186 202022 Pages: 13
  • 申请详细信息:   KR2020020248-A KR095707 16 Aug 2018
  • 优先权号:   KR095707

▎ 摘  要

NOVELTY - Manufacturing a graphene film involves preparing a substrate comprising a graphene layer, doping the graphene layer with a nitrogen dopant by irradiating ultraviolet rays to the substrate in a reaction gas atmosphere containing nitrogen and treating the substrate in a reaction gas atmosphere containing hydrogen to substitute doping of the nitrogen dopant with a hydrogen dopant. USE - Method for manufacturing a graphene film.