▎ 摘　　要

NOVELTY - Preparing graphene semiconductor composite material comprises (i) dissolving surfactant in pure water for dispersing graphene to prepare aqueous solution, (ii) dispersing graphite powder in the aqueous surfactant solution, adding chemical stripping agent, and stirring, (iii) adding stripping agent and composite semiconductor material particles, and stirring for 10-20 hours, while simultaneously dispersing the prepared graphene to uniformly compound semiconductor material on the surface of the graphene, (iv) filtering, washing by using organic solvent, drying, and sintering. USE - The method is useful for preparing graphene semiconductor composite material (claimed). ADVANTAGE - The method: has simple operation, low equipment requirement and mild conditions; saves energy; and is environmentally-friendly. DETAILED DESCRIPTION - Preparing graphene semiconductor composite material comprises (i) dissolving surfactant in pure water for dispersing graphene to prepare aqueous solution, (ii) dispersing graphite powder in the aqueous surfactant solution obtained in step (i), adding chemical stripping agent, and stirring for 1-2 hours, (iii) adding stripping agent and composite semiconductor material particles, and stirring for 10-20 hours, where during stirring process, the particle size of the semiconductor material particles is 0.01-10 m, large number of tiny semiconductor particles can significantly increase the number of collisions and contacts of the graphite stripping process, while simultaneously dispersing the prepared graphene to uniformly compound semiconductor material on the surface of the graphene, (iv) filtering, washing by using organic solvent, drying, and sintering at 500-700 degrees C for 30-45 minutes to obtain graphene semiconductor composite material, where the chemical release agent is organic solvent, ionic liquid, protonating agent, and inorganic salt according to the ratio of 100:30-50:3-5:15-20, the organic solvent is pyrrolidone, imidazolinone or amide, the ionic liquid is imidazole ionic liquid, the protonating agent isbenzoic acid, 2-naphthoic acid, 1-pyrene formic acid, 1-pyrene sulfonic acid, and the semiconductor particulate material is silicon carbide, gallium nitride, zinc oxide, diamond or nitride aluminum. An INDEPENDENT CLAIM is also included for the graphene semiconductor composite material prepared by the above mentioned method.