▎ 摘　　要

NOVELTY - The method involves selectively depositing graphene (804) on a metal layer having patterned metal features (802), while the semiconductor substrate (800) is maintained at a deposition temperature less than the semiconductor processing temperature limit during the selective deposition. A metal oxide over is deposited over graphene by a thermal-based deposition technique. A hermetic barrier is deposited over the metal oxide. The metal oxide comprises one of aluminum oxide, hafnium oxide, zirconium oxide and/or yttrium oxide. USE - Method for encapsulating graphene for integration in a semiconductor substrate. ADVANTAGE - The method encapsulates graphene in a semiconductor substrate with high electrical conductivity, high thermal conductivity and good mechanical strength and toughness, optical transparency, and high electron mobility. DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional schematic of a semiconductor substrate including patterned metal features deposited with graphene. Semiconductor substrate (800) Patterned metal features (802) Graphene (804) Low-k dielectric material (806)