▎ 摘　　要

NOVELTY - The device (100) has a gate insulating layer (120) on a conductive substrate (110). A channel layer is placed on the gate insulating layer. The channel layer including a semiconductor layer (140) and a graphene layer (130) is in direct contact with the semiconductor layer. The graphene layer including multiple graphene islands (132) spaced apart from each other. A source electrode is placed on one end of the channel layer and a drain electrode (151) on another end of the channel layer. USE - Graphene electronic device field effect transistor (FET), sensor, photo detector, etc. ADVANTAGE - The high charge mobility and relatively high electrical conductivity can be provided, by the graphene. The use of graphene in multifunctional devices using relatively low power can be obtained attention. Since the amorphous oxide semiconductor is fabricated by a solution process, a fabrication process can be simple and fabrication costs can be reduced. Because the amorphous oxide semiconductor forms the semiconductor layer by using a precursor in a solution state, a fabrication process of the graphene electronic device can be relatively easy and a fabrication cost of the graphene electronic device can be reduced. The on/off current ratio can be increase, due to an existence of the bandgap. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of fabricating a graphene electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a graphene electronic device having a channel layer including graphene islands. Graphene electronic device (100) Conductive substrate (110) Gate insulating layer (120) Graphene layer (130) Graphene island (132) Semiconductor layer (140) Drain electrode (151)