▎ 摘　　要

NOVELTY - The transistor has a graphene Fin thin film (11) that forms a strip groove shaped channel whose two sides are provided for forming source electrode and a drain electrode. A gate dielectric layer (12) is formed outside the graphene Fin thin film along the sidewalls and bottom portion of channel. A gate electrode (13) is formed outside the gate dielectric layer across the side walls and bottom portion of the channel of graphene Fin thin film. USE - Graphene FinFET transistor. ADVANTAGE - The graphene FinFET film is transferred to substrate on which the pattern is applied to FinFET as channel material, so that the electrical performance of the transistor is improved. The control of the channel is improved, so that the short channel effect is reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of graphene FinFET transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the FinFET transistor. (Drawing includes non-English language text) Graphene Fin thin film (11) Gate dielectric layer (12) Gate electrode (13) Gate electrode conductive lead (15) Extending portion (111)