▎ 摘　　要

NOVELTY - High impedance high attenuating backing material is prepared by carrying out chemical vapor deposition at 90100 degrees C for 10-30 minutes on foam nickel carrier using ethanol as carbon source and argon or hydrogen as carrier gas to prepare three-dimensional graphene foam framework; molding graphene foam framework, pouring mixture of tungsten powder and epoxy resin and allowing to penetrate through the graphene framework; and performing film compacting for 30-120 minutes, and continuously curing for 2 hours to obtain graphene/epoxy resin/tungsten composite film backing material. USE - Method for preparing high impedance high attenuating backing material (claimed). ADVANTAGE - The method can obtain backing material having good electrical conductivity and good sound absorption property. It has large conjugated system so that electrons can have free movement and sound energy is converted into heat energy. DETAILED DESCRIPTION - Preparation of high impedance high attenuating backing material comprises: (A) using ethanol as carbon source, argon or hydrogen as carrier gas, foam nickel as catalyst and carrier, and performing foam nickel annealing at 90100 degrees C for 10-30 minutes by chemical vapor deposition to prepare three-dimensional graphene foam framework; (B) mixing tungsten powder and epoxy resin, uniformly stirring and vacuumizing to remove bubble; (C) cutting graphene foam framework, setting into mold, pouring the mixture of tungsten powder and epoxy resin and allowing to penetrate through the graphene framework, and performing film compacting for 30-120 minutes, and continuously curing for 2 hours; and (D) taking the film out from the mold, and polishing using sand paper to remove excess epoxy resin and tungsten powder to obtain graphene/epoxy resin/tungsten composite film backing material.