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专利标题: Graphene switching device for use as diode has gate electrode which is provided on gate insulation layer arranged on graphene layer set on insulation layer.
专利号: US2014117313-A1, KR2014054744-A, US9048310-B2, KR1910579-B1
发明人: LEE J, PARK S, BYUN K, SEO D, SONG H, SHIN H, CHUNG H, HEO J, LEE J H, PARK S J, BYUN K E, SONG H J, SHIN H C, CHUNG H J, HEO J S
专利权人: UNIV SEOUL NAT R DB FOUND, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SNU R DB FOUND, UNIV SEOUL NAT R DB FOUND
国际专利分类: H01L029/78, H01L029/08, H01L029/12, H01L029/02
专利详细信息: US2014117313-A1 01 May 2014 H01L-029/78 201432 Pages: 14 English
申请详细信息: US2014117313-A1 US964353 12 Aug 2013
优先权号: KR120611

▎ 摘　　要

NOVELTY - The graphene switching device (200) has a graphene layer (230) provided on an insulation layer (220) and extending onto a semiconductor substrate (210) toward a first electrode (251). The graphene layer is spaced apart from the first electrode and has a lower portion that contacts the first well (211) of semiconductor substrate. The first well forms an energy barrier between graphene layer and first electrode. A second electrode (252) is provided on the graphene layer and the insulation layer. A gate electrode (270) is provided on a gate insulation layer (260) arranged on the graphene layer. USE - Graphene switching device for use as diode or low noise amplifier in radio frequency circuit. ADVANTAGE - Offers graphene switching layer with tunable barrier and improved on-current. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic cross-sectional view of a graphene switching device. Graphene switching device (200) Semiconductor substrate (210) First well (211) Insulation layer (220) Graphene layer (230) First electrode (251) Second electrode (252) Gate insulation layer (260) Gate electrode (270)