• 专利标题:   Electric component used in nitride semiconductor industry, has graphene layer(s) provided on sapphire substrate by epitaxial growth.
  • 专利号:   KR2010055098-A
  • 发明人:   SEUNG HYUN C
  • 专利权人:   SEUNG H C
  • 国际专利分类:   H01L021/31
  • 专利详细信息:   KR2010055098-A 26 May 2010 201047 Pages: 10
  • 申请详细信息:   KR2010055098-A KR114024 17 Nov 2008
  • 优先权号:   KR114024

▎ 摘  要

NOVELTY - An electric component (10) has one or more graphene layer (12) provided on a sapphire substrate (11) by epitaxial growth. USE - Electric component is used in nitride semiconductor industry. ADVANTAGE - The electric component is economically and efficiently manufactured using high quality substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of electric component. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of electric component. Electric component (10) Sapphire substrate (11) Graphene layer (12)