▎ 摘　　要

NOVELTY - Growing single crystal gallium nitride film on arbitrary self-supporting substrate involves nitride deposition on any self-supporting substrate, transferring the two-dimensional material with a single crystal hexagonal structure to a substrate deposited with nitride, growing aluminum nitride nucleation layer on single crystal hexagonal two-dimensional material, epitaxially growing gallium nitride single crystal film on the aluminum nitride nucleation layer. USE - Method for growing single crystal gallium nitride film on arbitrary self-supporting substrate. ADVANTAGE - The method has good repeatability, realizes growth of single crystal gallium nitride film on any self-supporting substrate, in simple manner.