▎ 摘　　要

NOVELTY - A graphene-based switching device comprises bottom gate electrode (108) which is disposed on a substrate, bottom gate dielectric layer (110) which is disposed over the bottom electrode and lower electrode having ferroelectric and piezoelectric properties, bi-layer graphene which is disposed over the bottom gate dielectric layer, and top gate electrode (116) which is disposed over the bi-layer graphene. USE - A graphene-based switching device. ADVANTAGE - The device has tunable bandgap. DETAILED DESCRIPTION - A graphene-based switching device comprises bottom gate electrode which is disposed on a substrate, bottom gate dielectric layer which is disposed over the bottom electrode and lower electrode having ferroelectric and piezoelectric properties, bi-layer graphene which is disposed over the bottom gate dielectric layer, and top gate electrode which is disposed over the bi-layer graphene in which applied voltage across the top and bottom gate electrodes result in subjecting the bi-layer graphene of graphene to applied strain that reduced interlayer spacing between bi-layer graphene creating bandgap in bi-layer graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of the band-gap modulation of bi-layer graphene transistor device. Bottom gate electrode (108) Bottom gate dielectric layer (110) Bi-layer graphene channel (112) Top gate electrode (116) Bandgap diagram (300)