• 专利标题:   Preparation of negative electrode material used for lithium ion battery, involves growing silicon nanospheres on graphene microchip, depositing metal oxide layer on obtained composite material, and forming carbon layer on composite material.
  • 专利号:   WO2018032974-A1, CN107768659-A
  • 发明人:   SUN S
  • 专利权人:   XIFENG 2D FUJIAN MATERIAL TECHNOLOGY CO, FUJIAN XINFENG TWO DIMENSIONAL MATERIAL
  • 国际专利分类:   B82Y030/00, H01M010/0525, H01M004/36, H01M004/38, H01M004/583, H01M004/62, H01M004/04
  • 专利详细信息:   WO2018032974-A1 22 Feb 2018 H01M-004/36 201817 Pages: 20 Chinese
  • 申请详细信息:   WO2018032974-A1 WOCN095797 03 Aug 2017
  • 优先权号:   CN10668836

▎ 摘  要

NOVELTY - Preparation of negative electrode material involves preparing a modified graphene microchip, growing silicon nanospheres on the surface of the graphene microchip, depositing a metal oxide layer on the surface of the obtained graphene microchip-silicon nanosphere composite material, performing an electrostatic spinning and calcination treatment to obtain a carbon nanofiber composite material, subjecting the carbon nanofiber composite material to an acid treatment, and forming a carbon coating layer on the outside of the carbon nanofiber composite material. USE - Preparation of negative electrode material used for lithium ion battery. ADVANTAGE - The method effectively mitigates the size effect of silicon, and provides an accurate and controllable gap structure and a space for volume expansion of the silicon in a charging and discharging process. The method aids in protecting the silicon nanospheres using the carbon coating layer formed at the outermost layer. The negative electrode material improves integrity and stability of the electrode structure. DETAILED DESCRIPTION - Preparation of negative electrode material involves preparing a modified graphene microchip, growing silicon nanospheres on the surface of the graphene microchip to obtain a graphene microchip-silicon nanosphere composite material, depositing a metal oxide layer on the surface of the graphene microchip-silicon nanosphere composite material using an atomic layer deposition process, uniformly dispersing the metal oxide layer deposited graphene microchip-silicon nanosphere composite material in a spinning solution, performing an electrostatic spinning and calcination treatment to obtain a carbon nanofiber composite material, subjecting the carbon nanofiber composite material to an acid treatment for removing the metal oxide layer to form a gap structure, and forming a carbon coating layer on the outside of the carbon nanofiber composite material.