▎ 摘　　要

NOVELTY - The operating method involves providing a photodiode device having at least one monolayer of a carbon-based material such as graphene, disposed between the two portions of dielectric material and over at least one layer of n-doped semiconductor material such as silicon. A voltage is applied across the gate electrode and one of the two terminal electrodes of photodiode device, then exposing the photodiode device to electromagnetic radiation. The measure of an electrical property of the photodiode device provides a measure of the electromagnetic radiation incident on the photodiode device. USE - Photodiode device operating method. ADVANTAGE - Provides a tunable graphene-silicon heterojunction dual-model photodetector with ultra-high responsivity and quantum gain by providing photodiode having monolayer of carbon-based material such as graphene, and layer of n-doped semiconductor material such as silicon, exposed to electromagnetic radiation. DESCRIPTION OF DRAWING(S) - The drawing shows a graph illustrating a Photocurrent Responsivity, which is a measure of output photo-current in Amperes for a given incident light power in Watts, for graphene/silicon photodetectors of various sizes and operated in two different modes.