▎ 摘　　要

NOVELTY - The method involves providing a graphene with a PMM thin film for hot plate baking in acetone. PMMA glue is removed to take out nitrogen blowing dry. A semiconductor characteristic test is performed. A grid voltage is supplied with a substrate silicon piece. A back source electrode and a drain electrode are connected with the substrate silicon piece. Leakage electric current amount along with change of the grid voltage is determined. A migration rate of the graphene is determined. The grid voltage is sent to a grid medium silicon dioxide to obtain unit area capacitance. USE - Field effect estimate CVD method for increasing a graphene migration rate of a copper foil. ADVANTAGE - The method enables simplifying a process step, reducing cost and avoiding photo-etching for graphene influence. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a field effect estimate CVD method. '(Drawing includes non-English language text)'