▎ 摘　　要

NOVELTY - The device (100) has a substrate formed with a first source/drain region and a second source/drain region. A graphene channel (110) is fixed between the first source/drain region and the second source/drain region. A gate is extended around the first source/drain region from a first side (112) of the graphene channel to a second side (114) of the graphene channel. A top surface of the substrate lies in a first plane. A bottom surface of the first source/drain region and a bottom surface of the gate lie in a second plane parallel to the first plane. USE - Semiconductor device. ADVANTAGE - The device can replace a first in-plane gate, a second in-plane gate, a first active area or a second active area with the graphene channel to simplify fabrication process of a device main body so as to increase first in-plane gate and second in-plane gate utilizing rate, electron mobility of the device main body by positioning the first in-plane gate, the second in-plane gate, the first active area or the second active area in a plane of the graphene channel. DESCRIPTION OF DRAWING(S) - The drawing shows a top down view of a semiconductor device. Semiconductor device (100) Graphene channel (110) Sides (112, 114) In-plane gates (116, 118)