▎ 摘　　要

NOVELTY - Preparing a graphene oxide-cobalt nanocrystal-diamond film involves carrying out silicon wafer pretreatment by ultrasonically cleaning the silicon wafer in analytical pure methanol for 5 minutes, taking out silicon wafer, placing it in a 10% hydrofluoric acid aqueous solution for 5 minutes, placing it in analytical pure methanol, subjecting it to ultrasonic cleaning for 5 minutes, and then drying with nitrogen. USE - Method for preparing a graphene oxide-cobalt nanocrystal-diamond film. ADVANTAGE - The method enables to prepare a graphene oxide-cobalt nanocrystal-diamond film, which has fine nanocrystalline/amorphous characteristics. DETAILED DESCRIPTION - The electrolyte is disposed, where the electrolyte solvent is analytically pure methanol, concentration of cobalt (II) acetylacetonate in electrolyte is 0.06-0.14mg/mL, and concentration of graphene oxide in the electrolyte is 0.003-0.011mg/mL. The processed silicon wafer is fixed on cathode graphite electrode, platinum plate is fixed on anode graphite electrode, electrolyte is added until the distance between the electrode and liquid surface is 10-15mm, and the correct connection of the electrolytic cell is positive, and uses anode, cathode and adopts high-voltage direct current power supply. The electrolytic cell is immersed in a constant temperature water bath during the preparation process, where temperature is controlled to 55 degrees C and nitrogen gas is introduced for 8 hours. The external power supply adopts high-voltage direct current power supply with a voltage of 1200V and under the action of electric field the deposition time is controlled to 8 hours, carbon dioxide and CH3+ are move to the cathode, and graphene oxide is deposited on silicon wafer by CH3+ and Co2+ under the action of two-pole high electric field to obtain final product.