▎ 摘　　要

NOVELTY - The device has a graphene layer (180) which is arranged on a substrate (110). Gate electrodes (G1-G6) are laminated on the graphene layer. Oxide semiconductor patterns (130, 132, 138) are connected to the graphene layer through the gate electrodes. Information storage film is provided between the gate electrodes and oxide semiconductor pattern. The oxide semiconductor pattern comprises zinc oxide layer. USE - Semiconductor memory device such as three-dimensional nonvolatile memory device in PDA, portable computer, web tablet, wireless mobile phone, mobile phone, digital music player and memory card. ADVANTAGE - The material used as the channel of the semiconductor memory device is improved and the reliability of three-dimensional nonvolatile memory device is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the semiconductor device. Substrate (110) Oxide semiconductor patterns (130, 132, 138) Strapping line (160) Graphene layer (180) Gate electrodes (G1-G6)