• 专利标题:   Manufacturing a metal structure for metal wire which further used for semiconductor device, involves forming a metal layer comprising a metal and nano-abrasive, and supplying slurry on metal layer to perform chemical mechanical polishing.
  • 专利号:   US2021028024-A1, KR2021012866-A, US11424133-B2
  • 发明人:   TAKAI K, KIM D Y, YOON B, YOON B U
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   B24B037/04, C09G001/04, C09K003/14, H01L021/288, H01L021/321, H01L021/768, H01L021/28, H01L021/304, H01L021/306
  • 专利详细信息:   US2021028024-A1 28 Jan 2021 H01L-021/321 202113 Pages: 15 English
  • 申请详细信息:   US2021028024-A1 US825237 20 Mar 2020
  • 优先权号:   KR090524, KR163597

▎ 摘  要

NOVELTY - Manufacturing a metal structure involves forming a metal layer comprising a metal and a nano-abrasive, the nano-abrasive having an average particle diameter of less than 5 nanometers, and supplying slurry on the metal layer to perform chemical mechanical polishing. USE - Method for manufacturing a metal structure used for metal wire which further used for semiconductor device and for electronic device (all claimed). ADVANTAGE - The prepared metal structure is capable of improving a polishing rate while reducing damage and shape deformation of the metal structure. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing a semiconductor device which involves forming a metal wire.