▎ 摘　　要

NOVELTY - The transistor has the graphene whose ends are overlapped with hexagonal boron nitride (h-BN) such that h-BN is not completely covered and the middle portion of h-BN is maintained. The organic semiconductor thin films are self-assembled on the exposed h-BN and graphene by controlling the temperature, pressure and time in the medium vacuum environment in the low-pressure tube furnace. The self-assembly of organic semiconductor thin film growth in exposed h-BN and graphene is realized by graphene as contact electrode. USE - Self-assembled organic semiconductor thin film transistor used in flexible organic electronics, optoelectronic device and display device. ADVANTAGE - The method is extended to large area of self-assembled organic semiconductor thin film transistor as the large-scale preparation of graphene and h-BN process are matured. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a locating method for preparing self-assembled organic semiconductor thin film transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the stacking mechanically stripped graphene at both ends of h-BN. Glass slide (1) Silica substrate (2) Graphene (3) Insulating layer (5) Lower layer (6)