▎ 摘　　要

NOVELTY - The method comprises forming a graphene layer on a basic material in a metal thin-film form, forming a metallic foil on the graphene layer, and forming the graphene layer in the metal thin-film form on the metallic foil. The step of forming the graphene layer on the base material comprises forming a metal catalytic layer on the base material, subsequently forming the graphene layer on the metal catalytic layer and transferring the graphene on the material, where the metal catalytic layer is formed using sputtering, thermal evaporation or molecular beam vacuum evaporation process. USE - The method is useful for forming stacked graphene (claimed) that is used in a transparent electrode of an electric component including a photoelectric cell, a solar cell and an optical detector. ADVANTAGE - The stacked graphene is prepared with uniform floor number and uniform thickness. DETAILED DESCRIPTION - The method comprises forming a graphene layer on a basic material in a metal thin-film form, forming a metallic foil on the graphene layer, and forming the graphene layer in the metal thin-film form on the metallic foil. The metallic foil is formed using chemical vapor deposition (CVD) (preferred), atomic layer deposition (ALD), sputtering, thermal evaporation, electronic beam evaporation (e-beam evaporation), molecular beam vacuum evaporation, pulsed laser deposition (PLD) or sol-gel process, where the CVD process includes high temperature CVD, inductively coupled plasma CVD, low pressure CVD, atmospheric pressure CVD, metal-organic CVD and plasma CVD. The step of forming the graphene layer on the base material comprises forming a metal catalytic layer on the base material, subsequently forming the graphene layer on the metal catalytic layer and transferring the graphene on the material, where the metal catalytic layer is formed using ALD, sputtering, thermal evaporation, e-beam evaporation, molecular beam vacuum evaporation, PLD, CVD or sol-gel process. The step of forming the metallic foil on the graphene layer and step of forming the graphene layer are performed for greater than two times, where the thickness of the metallic foil is 10-100 nm, and the graphene layer is formed under the low pressure or vacuum. The CVD process is performed at 300-2000 degrees C.