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  • 专利标题:   Bandgap opening in graphene, comprises e.g. placing the graphene on silicon chip, introducing into ion implanter, bombarding the graphene on silicon sheet by using ion beam to produce defective product, and performing annealing treatment.
  • 专利号:   CN102703988-A
  • 发明人:   CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M
  • 专利权人:   CHINESE ACAD SCI SHANGHAI MICROSYSTEMS
  • 国际专利分类:   C30B031/22, C30B033/02
  • 专利详细信息:   CN102703988-A 03 Oct 2012 C30B-031/22 201304 Pages: 7 Chinese
  • 申请详细信息:   CN102703988-A CN10174733 31 May 2012
  • 优先权号:   CN10174733

▎ 摘　　要

NOVELTY - Bandgap opening in graphene comprises (i) placing the graphene on silicon chip, introducing into an ion implanter, and bombarding the graphene on the silicon sheet by using ion beam to produce defective product, and (ii) performing annealing treatment defective graphene under a gaseous atmosphere after ion beam bombardment. USE - The method is useful for bandgap opening in graphene. ADVANTAGE - The method realizes the doping of graphene, and improves switch characteristics of doped graphene.