▎ 摘　　要

NOVELTY - Preparing two-dimensional material heterojunction device, comprises (i) dissociating the two-dimensional material; (ii) embedding the electrodeto the substrate by spin coating the substrate electronbeam photoresist, baking, then using electron beam lithography to expose the pre-designed electrodeshape, developing solution, adding into the reaction ion etching machine to etch the substrate, then evaporating the electrode, finally removing the glue, obtaining the substrate embedded with electrode; (iii) transferring the dissociated two-dimensional material to the substrate embedded with the electrode; (iv) taking at least one same or different two-dimensional material repeating and operation, forming multi-layer heterojunction structure and obtaining a two-dimensional material heterojunction device. USE - The method is useful for preparing two-dimensional material heterojunction device. ADVANTAGE - The device improves the success rate and the device quality of the multi-layer heterojunction device. The preparation method also controls the bonding rate in the dry transfer process by heat expansion and cold contraction to reduce the damage to the material in the bonding process; and improves the success rate and device quality of the multi-layer heterojunction device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for two-dimensional material heterojunction device.