• 专利标题:   Non-destructive thinning of material with low energy light excitation involves growing or transferring two-dimensional material to target substrate, pretreating material surface to increase defect density, and applying etching excitation.
  • 专利号:   CN112537796-A, CN112537796-B
  • 发明人:   LI S, QIU L, XU N
  • 专利权人:   UNIV NANJING
  • 国际专利分类:   B82Y030/00, B82Y040/00, C01G041/00
  • 专利详细信息:   CN112537796-A 23 Mar 2021 C01G-041/00 202144 Pages: 11 Chinese
  • 申请详细信息:   CN112537796-A CN11420585 08 Dec 2020
  • 优先权号:   CN11420585

▎ 摘  要

NOVELTY - Non-destructive thinning of material with low energy light excitation involves carrying out in-situ growing or transferring a two-dimensional material from a support to another target substrate, pretreating the surface of the material to increase the surface density, controlling the etching condition, and applying an etching excitation on the material to be thinned. USE - Non-destructive thinning of material with low energy light excitation. ADVANTAGE - The method produces thinned material having lattice integrity, excellent physical characteristics, thinning precision reaching atomic level, with in-situ directional etching capability, is compatible with microelectronic technique, uses low power etching excitation and has improved process controllability.