1. 平台首页
  2. 国际专利信息
  • 专利标题:   Doping graphene in substrate involves mixing graphene material with first to be doped base material to obtain mixed crushed material, where the mixed crushed material is added with pulverized material of second to-be-doped base material.
  • 专利号:   CN106117767-A
  • 发明人:   ZHANG J, MA Y, WANG S, MA J, ZHANG X, LIU D
  • 专利权人:   JINAN SHENGQUAN GROUP SHARE HOLDING CO L
  • 国际专利分类:   C08J003/12, C08K003/04, C08L023/08, C08L023/12, C08L025/06
  • 专利详细信息:   CN106117767-A 16 Nov 2016 C08L-023/08 201709 Pages: 11 Chinese
  • 申请详细信息:   CN106117767-A CN10504042 30 Jun 2016
  • 优先权号:   CN10504042

▎ 摘　　要

NOVELTY - Doping graphene in substrate involves mixing graphene material with first to be doped base material to obtain mixed crushed material. The mixed crushed material is added with pulverized material of second to-be-doped base material to obtain the desired product. The graphene material comprises graphene, graphene oxide, graphene derivative and biomass graphene. The mixed crushed material has particle size of less than 1mm. USE - Method for doping graphene in substrate (claimed). ADVANTAGE - The method enables to dope graphene in substrate with improved thermal stability.